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| NTE2597 Silicon NPN Transistor High Voltage, High Speed Switch Features: D High Breakdown Voltage and Reliability D Fast Switching Speed D Wide ASO Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Collector Dissipation, PD TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 10%. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Symbol ICBO IEBO hFE VCE(sat) VBE(sat) Test Conditions VCB = 800V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.8A VCE = 5V, IC = 4A IC = 6A, IB = 1.2A IC = 6A, IB = 1.2A Min - - 10 8 - - Typ - - - - - - Max 10 10 40 - 2.0 1.5 V V Unit A A Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Gain-Bandwidth Product Output Capacitance Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Turn-On Time Storage Time Fall Time Symbol fT Cob Test Conditions VCE = 10V, IC = 0.8A VCB = 10V, f = 1MHz Min - - 1100 800 7 800 - - - Typ 15 215 - - - - - - - Max - - - - - - 0.5 3.0 0.3 Unit MHz pF V V V V s s s V(BR)CBO IC = 1mA, IE = 0 V(BR)EBO IE = 1mA, IC = 0 VCEX(sus) IC = 6A, IB1 = 1.2A, IB2 = -1.2A, L = 500H Clamped ton tstg tf IC = 8A, IB1 = 1.6A, IB2 = -3.2A, RL = 50, VCC = 400V Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = .221 (5.6) .123 (3.1) .134 (3.4) Dia .630 (16.0) .315 (8.0) .866 (22.0) B .158 (4.0) C E .804 (20.4) .215 (5.45) .040 (1.0) |
Price & Availability of NTE2597
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